IRFZ34NPBF

Teknik Özellikler

Parça Durumu

Active

Recovery Time

86 ns

Gate To Source Voltage Vgs

20V

Power Dissipation

56W

Voltage Rated Dc

55V

Vgsth Max Id

4V @ 250μA

Yükseklik

15.24mm

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Power Dissipation Max

68W Tc

Vgs Max

±20V

Akım Değeri

29A

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Lead Pitch

2.54mm

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.5156mm

Yayın Yılı

1997

Rise Time

49ns

Transistor Application

SWITCHING

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Contact Plating

Tin

Terminal

Through Hole

Rds On Max Id Vgs

40m Ω @ 16A, 10V

Dual Supply Voltage

55V

Genişlik

4.69mm

Nominal Vgs

4 V

Montaj

Through Hole

Turn On Delay Time

7 ns

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

34nC @ 10V

Avalanche Energy Rating Eas

65 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

40mOhm