IRFU6215PBF

Teknik Özellikler

Additional Feature

AVALANCHE RATED

Voltage Rated Dc

-150V

Drain To Source Voltage Vdss

150V

Power Dissipation

110W

Yükseklik

6.22mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Parça Durumu

Not For New Designs

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Threshold Voltage

-4V

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Vgs Max

±20V

Power Dissipation Max

110W Tc

Tepe Reflow Süresi (maks. sn)

30

Transistor Element Material

SILICON

Akım Değeri

-13A

Pulsed Drain Currentmax Idm

44A

Uzunluk

6.7056mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2004

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Rds On Max Id Vgs

295m Ω @ 6.6A, 10V

Transistor Application

SWITCHING

Rise Time

36ns

Kurşunsuz

Contains Lead, Lead Free

Element Configuration

Single

Ambalaj

Tube

Turn On Delay Time

14 ns

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

580MOhm

Gate Charge Qg Max Vgs

66nC @ 10V

Genişlik

2.3876mm

Dual Supply Voltage

-150V

Nominal Vgs

-4 V

Montaj

Through Hole

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA