IRFU5305PBF

Teknik Özellikler

Yükseklik

6.1mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Drain To Source Voltage Vdss

55V

Voltage Rated Dc

-55V

Power Dissipation

89W

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Threshold Voltage

-4V

Lead Pitch

2.28mm

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Akım Değeri

-28A

Vgs Max

±20V

Power Dissipation Max

110W Tc

Tepe Reflow Süresi (maks. sn)

30

Uzunluk

6.6mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2004

ECCN Kodu

EAR99

Rds On Max Id Vgs

65m Ω @ 16A, 10V

Contact Plating

Tin

Kurşunsuz

Contains Lead, Lead Free

Element Configuration

Single

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

66ns

Avalanche Energy Rating Eas

280 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

65mOhm

Gate Charge Qg Max Vgs

63nC @ 10V

Turn On Delay Time

14 ns

Montaj Tipi

Through Hole

Nominal Vgs

-4 V

Montaj

Through Hole

Genişlik

2.3mm

Input Capacitance Ciss Max Vds

1200pF @ 25V