IRFU4105ZPBF

Teknik Özellikler

Akım Değeri

30A

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±20V

Power Dissipation Max

48W Tc

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Lead Pitch

2.28mm

Threshold Voltage

4V

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Recovery Time

29 ns

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Yükseklik

6.1mm

Power Dissipation

48W

Voltage Rated Dc

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

40ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

24.5m Ω @ 18A, 10V

Terminal

Through Hole

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Yayın Yılı

2003

Uzunluk

6.6mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

120A

Fall Time Typ

24 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

30A Tc

Lead Length

9.65mm

Fabrika Tedarik Süresi

15 Weeks

Input Capacitance Ciss Max Vds

740pF @ 25V

Seri

HEXFET®