IRFU3711ZPBF

Teknik Özellikler

Vgsth Max Id

2.45V @ 250μA

RoHS Durumu

RoHS Compliant

Yükseklik

6.22mm

Power Dissipation

79W

Voltage Rated Dc

20V

Gate To Source Voltage Vgs

20V

Recovery Time

28 ns

Parça Durumu

Obsolete

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Threshold Voltage

2V

Radyasyon Dayanımı

No

Akım Değeri

93A

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

79W Tc

Yayın Yılı

2004

Operating Mode

ENHANCEMENT MODE

Uzunluk

6.7056mm

ECCN Kodu

EAR99

Rds On Max Id Vgs

5.7m Ω @ 15A, 10V

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

13ns

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

27nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

140 mJ

Montaj Tipi

Through Hole

Turn On Delay Time

12 ns

Montaj

Through Hole

Nominal Vgs

2 V

Genişlik

2.3876mm

Input Capacitance Ciss Max Vds

2160pF @ 10V

Seri

HEXFET®

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time Typ

5.2 ns

Fet Type

N-Channel

Current Continuous Drain Id25

93A Tc