IRFU3710ZPBF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Recovery Time

53 ns

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 250μA

RoHS Durumu

RoHS Compliant

Yükseklik

6.1mm

Power Dissipation

140W

Voltage Rated Dc

100V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Akım Değeri

42A

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

140W Tc

Vgs Max

±20V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Lead Pitch

2.28mm

Threshold Voltage

4V

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Yayın Yılı

2004

Uzunluk

6.6mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

220A

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

43ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

18m Ω @ 33A, 10V

Terminal

Through Hole

Montaj

Through Hole

Nominal Vgs

4 V

Dual Supply Voltage

100V

Genişlik

2.3mm

Gate Charge Qg Max Vgs

100nC @ 10V

Direnç

18MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

150 mJ