
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drive Voltage Max Rds On Min Rds On
- 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 3
- Drain To Source Breakdown Voltage
- 55V
- Turn Off Delay Time
- 55 ns
- Pin Sayısı
- 3
- Case Connection
- DRAIN
- Drainsource On Resistancemax
- 0.016Ohm
- Number Of Elements
- 1
- Continuous Drain Current Id
- 56A
- Seri
- HEXFET®
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 2430pF @ 25V
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 56A Tc
- Fall Time Typ
- 78 ns
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 15 ns
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Genişlik
- 2.3876mm
- Montaj
- Through Hole
- Rds On Max Id Vgs
- 16m Ω @ 34A, 10V
- Rise Time
- 130ns
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Pulsed Drain Currentmax Idm
- 220A
- Yayın Yılı
- 2000
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 6.7056mm
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation Max
- 110W Tc
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