IRFU15N20DPBF

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

41nC @ 10V

Vgsth Max Id

5.5V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Turn On Delay Time

9.7 ns

Montaj Tipi

Through Hole

Power Dissipation

140W

Voltage Rated Dc

200V

Fall Time Typ

8.9 ns

Akım Değeri

17A

Fet Type

N-Channel

Vgs Max

±30V

Power Dissipation Max

110W Tc

Current Continuous Drain Id25

17A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

910pF @ 25V

Seri

HEXFET®

Radyasyon Dayanımı

No

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Continuous Drain Current Id

17A

Number Of Elements

1

Yayın Yılı

2005

Pin Sayısı

3

Turn Off Delay Time

17 ns

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

32ns

Rds On Max Id Vgs

165m Ω @ 10A, 10V

Drain To Source Breakdown Voltage

200V

Drive Voltage Max Rds On Min Rds On

10V