IRFU13N20DPBF

Teknik Özellikler

Gate Charge Qg Max Vgs

38nC @ 10V

Direnç

235MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Turn On Delay Time

11 ns

Montaj

Through Hole

Nominal Vgs

5.5 V

Dual Supply Voltage

200V

Genişlik

2.3876mm

Fabrika Tedarik Süresi

14 Weeks

Input Capacitance Ciss Max Vds

830pF @ 25V

Seri

HEXFET®

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time Typ

10 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

13A Tc

Case Connection

DRAIN

Qualification Status

Not Qualified

Pin Sayısı

3

Continuous Drain Current Id

13A

Number Of Elements

1

Drain To Source Breakdown Voltage

200V

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Turn Off Delay Time

17 ns

Vgsth Max Id

5.5V @ 250μA

RoHS Durumu

ROHS3 Compliant

Yükseklik

2.39mm

Power Dissipation

110W

Voltage Rated Dc

200V

Gate To Source Voltage Vgs

30V

Parça Durumu

Not For New Designs

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Akım Değeri

13A

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

110W Tc