IRFU1205PBF

Teknik Özellikler

Power Dissipation Max

107W Tc

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

44A

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Power Dissipation

69W

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Voltage Rated Dc

55V

Vgsth Max Id

4V @ 250μA

Yükseklik

6.22mm

RoHS Durumu

ROHS3 Compliant

Rise Time

69ns

Transistor Application

SWITCHING

Ambalaj

Tube

Kurşunsuz

Lead Free

Rds On Max Id Vgs

27m Ω @ 26A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Currentmax Idm

160A

Uzunluk

6.7056mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2004

Fet Type

N-Channel

Current Continuous Drain Id25

44A Tc

Fall Time Typ

60 ns

JESD-609 Kodu

e3

Seri

HEXFET®

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Fabrika Tedarik Süresi

14 Weeks

Input Capacitance Ciss Max Vds

1300pF @ 25V

Genişlik

2.3876mm

Montaj

Through Hole

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

7.3 ns

Gate Charge Qg Max Vgs

65nC @ 10V