IRFU024NPBF

Teknik Özellikler

ECCN Kodu

EAR99

Yayın Yılı

1998

Operating Mode

ENHANCEMENT MODE

Uzunluk

6.7056mm

Pulsed Drain Currentmax Idm

68A

Element Configuration

Single

Kurşunsuz

Contains Lead, Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

34ns

Rds On Max Id Vgs

75m Ω @ 10A, 10V

Terminal

Through Hole

Contact Plating

Tin

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yükseklik

6.22mm

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

55V

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Power Dissipation

38W

Transistor Element Material

SILICON

Akım Değeri

17A

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

45W Tc

Vgs Max

±20V

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

17A

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

Turn Off Delay Time

19 ns

Drain To Source Breakdown Voltage

55V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Nominal Vgs

4 V