IRFSL7437PBF

Teknik Özellikler

Number Of Elements

1

ECCN Kodu

EAR99

Continuous Drain Current Id

195A

Pin Sayısı

3

Yayın Yılı

2012

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Transistor Application

SWITCHING

Rise Time

70ns

Kurşunsuz

Lead Free

Turn Off Delay Time

78 ns

Ambalaj

Tube

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

6V 10V

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

1.8m Ω @ 100A, 10V

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Nominal Vgs

3 V

Power Dissipation

230W

Turn On Delay Time

19 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Direnç

1.8MOhm

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

802 mJ

Vgsth Max Id

3.9V @ 150μA

Gate Charge Qg Max Vgs

225nC @ 10V

Current Continuous Drain Id25

195A Tc

Power Dissipation Max

230W Tc

Vgs Max

±20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Fall Time Typ

53 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Radyasyon Dayanımı

No

Seri

HEXFET®, StrongIRFET™