IRFSL5615PBF

Teknik Özellikler

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Power Dissipation

144W

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.652mm

Vgsth Max Id

5V @ 100μA

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation Max

144W Tc

Vgs Max

±20V

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

140A

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.668mm

Transistor Application

AMPLIFIER

Rise Time

23.1ns

Kurşunsuz

Lead Free

Ambalaj

Tube

Rds On Max Id Vgs

42m Ω @ 21A, 10V

Genişlik

4.826mm

Montaj

Through Hole

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

8.9 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

109 mJ

Gate Charge Qg Max Vgs

40nC @ 10V

Current Continuous Drain Id25

33A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Fall Time Typ

13.1 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance Ciss Max Vds

1750pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Drainsource On Resistancemax

0.042Ohm