IRFSL4510PBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 100μA

Gate Charge Qg Max Vgs

87nC @ 10V

Power Dissipation

140W

Turn On Delay Time

13 ns

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Nominal Vgs

3 V

Parça Durumu

Obsolete

Threshold Voltage

3V

Input Capacitance Ciss Max Vds

3180pF @ 50V

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

15 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Number Of Channels

1

Transistor Element Material

SILICON

Fall Time Typ

28 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Power Dissipation Max

140W Tc

Current Continuous Drain Id25

61A Tc

Fet Type

N-Channel

Yayın Yılı

2012

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Pin Sayısı

3

Pulsed Drain Currentmax Idm

250A

Continuous Drain Current Id

61A

Number Of Elements

1

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

13.9m Ω @ 37A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single