IRFSL4310PBF

Teknik Özellikler

Power Dissipation

330W

RoHS Durumu

RoHS Compliant

Yükseklik

9.65mm

Vgsth Max Id

4V @ 250μA

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±20V

Power Dissipation Max

300W Tc

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

550A

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Rds On Max Id Vgs

7m Ω @ 75A, 10V

Transistor Application

SWITCHING

Rise Time

110ns

Element Configuration

Single

Ambalaj

Tube

Montaj Tipi

Through Hole

Turn On Delay Time

26 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

980 mJ

Gate Charge Qg Max Vgs

250nC @ 10V

Genişlik

4.83mm

Montaj

Through Hole

Nominal Vgs

4 V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Input Capacitance Ciss Max Vds

7670pF @ 50V

Current Continuous Drain Id25

130A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Fall Time Typ

78 ns