IRFSL4227PBF

Teknik Özellikler

Rise Time

20ns

Transistor Application

SWITCHING

Ambalaj

Tube

Element Configuration

Single

Rds On Max Id Vgs

26m Ω @ 46A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Currentmax Idm

260A

Uzunluk

10.67mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Power Dissipation Max

330W Tc

Vgs Max

±30V

Tepe Reflow Süresi (maks. sn)

40

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-40°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

5V

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

30V

Power Dissipation

330W

Vgsth Max Id

5V @ 250μA

Yükseklik

9.65mm

RoHS Durumu

RoHS Compliant

Turn Off Delay Time

21 ns

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Breakdown Voltage

200V

Drainsource On Resistancemax

0.026Ohm

Number Of Elements

1

Continuous Drain Current Id

62A

Pin Sayısı

3

Case Connection

DRAIN

Fet Type

N-Channel

Current Continuous Drain Id25

62A Tc

Fall Time Typ

31 ns

JESD-609 Kodu

e3

Seri

HEXFET®