IRFS7734TRLPBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Yayın Yılı

2013

Gate Charge Qg Max Vgs

270nC @ 10V

Current Continuous Drain Id25

183A Tc

Fet Type

N-Channel

Power Dissipation Max

290W Tc

Drain To Source Breakdown Voltage

75V

Seri

HEXFET®, StrongIRFET™

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight

3.949996g

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Element Configuration

Single

Avalanche Energy Rating Eas

670 mJ

Turn On Delay Time

20 ns

Input Capacitance Ciss Max Vds

10150pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

3.7V @ 250μA

Terminal Formu

GULL WING

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Continuous Drain Current Id

183A

Montaj

Surface Mount

Transistor Element Material

SILICON

Terminal Sayısı

2

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

650A

Parça Durumu

Active

Vgs Max

±20V

Fall Time Typ

100 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Montaj Tipi

Surface Mount