IRFS7730TRLPBF

Teknik Özellikler

Current Continuous Drain Id25

195A Tc

Drainsource On Resistancemax

0.0026Ohm

Gate Charge Qg Max Vgs

407nC @ 10V

Yayın Yılı

2013

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

75V

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®, StrongIRFET™

Drain To Source Voltage Vdss

75V

Power Dissipation Max

375W Tc

Fet Type

N-Channel

Terminal Sayısı

2

Transistor Element Material

SILICON

Continuous Drain Current Id

195A

Montaj

Surface Mount

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Vgsth Max Id

3.7V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

13660pF @ 25V

Turn On Delay Time

21 ns

Avalanche Energy Rating Eas

898 mJ

Element Configuration

Single

Rise Time

120ns

Rds On Max Id Vgs

2.6m Ω @ 100A, 10V

Number Of Channels

1

Number Of Elements

1

Turn Off Delay Time

180 ns

Montaj Tipi

Surface Mount

Fall Time Typ

115 ns

Drive Voltage Max Rds On Min Rds On

6V 10V