IRFS5615TRLPBF

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Yayın Yılı

2008

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

40nC @ 10V

Current Continuous Drain Id25

33A Tc

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

10.668mm

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

10 Weeks

Threshold Voltage

5V

Yükseklik

4.826mm

Vgsth Max Id

5V @ 100μA

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Sayısı

2

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

13.1 ns

Montaj Tipi

Surface Mount

Rise Time

23.1ns

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Power Dissipation

144W

Drainsource On Resistancemax

0.042Ohm

Power Dissipation Max

144W Tc

Drain To Source Breakdown Voltage

150V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

AMPLIFIER

Genişlik

9.652mm

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

1750pF @ 50V

Turn On Delay Time

8.9 ns