
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgs Max
- ±20V
- Pulsed Drain Currentmax Idm
- 100A
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 77.5m Ω @ 15A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 25.4 ns
- Input Capacitance Ciss Max Vds
- 1710pF @ 50V
- Turn On Delay Time
- 13.4 ns
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 24A
- Case Connection
- DRAIN
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 200V
- Power Dissipation Max
- 144W Tc
- Genişlik
- 4.826mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.0775Ohm
- Power Dissipation
- 144W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 14.8 ns
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rise Time
- 22.4ns
- Montaj Tipi
- Surface Mount
- Yükseklik
- 9.65mm
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Montaj
- Surface Mount, Through Hole
- Jesd30 Code
- R-PSSO-G2
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Vgsth Max Id
- 5V @ 100μA
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