
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Avalanche Energy Rating Eas
- 94 mJ
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 1200pF @ 50V
- Yükseklik
- 4.572mm
- Turn On Delay Time
- 7.8 ns
- Continuous Drain Current Id
- 18A
- Montaj
- Surface Mount
- Case Connection
- DRAIN
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Jesd30 Code
- R-PSSO-G2
- Terminal Sayısı
- 2
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 4.9V @ 100μA
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Formu
- GULL WING
- Vgs Max
- ±20V
- Fall Time Typ
- 6.3 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Pulsed Drain Currentmax Idm
- 52A
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 1
- Rise Time
- 12ns
- Rds On Max Id Vgs
- 105m Ω @ 11A, 10V
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 16 ns
- Yayın Yılı
- 2009
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 18A Tc
- Power Dissipation
- 100W
- Gate Charge Qg Max Vgs
- 29nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- 30
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Fet Type
- N-Channel
- Power Dissipation Max
- 100W Tc
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