Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 180A
- Case Connection
- DRAIN
- Terminal Formu
- GULL WING
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 9575pF @ 50V
- Turn On Delay Time
- 21 ns
- Rds On Max Id Vgs
- 4.7m Ω @ 106A, 10V
- Number Of Elements
- 1
- Contact Plating
- Tin
- Turn Off Delay Time
- 100 ns
- Vgs Max
- ±20V
- Pulsed Drain Currentmax Idm
- 720A
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Terminal
- SMD/SMT
- Dual Supply Voltage
- 100V
- Power Dissipation
- 375W
- Reverse Recovery Time
- 72 ns
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Genişlik
- 9.65mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 100V
- Power Dissipation Max
- 375W Tc
- Terminal Sayısı
- 2
- Montaj
- Surface Mount
- Jesd30 Code
- R-PSSO-G2
- Vgsth Max Id
- 4V @ 250μA
- Yükseklik
- 4.826mm
- Element Configuration
- Single
- Threshold Voltage
- 4V
- Rise Time
- 86ns
- Montaj Tipi
- Surface Mount
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