IRFS3307ZPBF

Teknik Özellikler

Seri

HEXFET®

Drain To Source Breakdown Voltage

75V

Akım Değeri

120A

Fet Type

N-Channel

Power Dissipation Max

230W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Uzunluk

6.73mm

Genişlik

6.22mm

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Yayın Yılı

2006

Gate Charge Qg Max Vgs

110nC @ 10V

Reach Svhc

No SVHC

Dual Supply Voltage

75V

Power Dissipation

230W

Current Continuous Drain Id25

120A Tc

Terminal

SMD/SMT

Parça Durumu

Discontinued

Pin Sayısı

3

Recovery Time

50 ns

Gate To Source Voltage Vgs

20V

Fall Time Typ

65 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Turn Off Delay Time

38 ns

Montaj Tipi

Surface Mount

Direnç

5.8MOhm

Rise Time

64ns

Rds On Max Id Vgs

5.8m Ω @ 75A, 10V

Voltage Rated Dc

75V

Input Capacitance Ciss Max Vds

4750pF @ 50V

Yükseklik

2.39mm

Turn On Delay Time

15 ns

Element Configuration

Single

Threshold Voltage

4V

Vgsth Max Id

4V @ 150μA