IRFS3107TRLPBF

Teknik Özellikler

Pulsed Drain Currentmax Idm

900A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Turn Off Delay Time

99 ns

Rds On Max Id Vgs

3m Ω @ 140A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

9370pF @ 50V

Turn On Delay Time

19 ns

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

195A

Case Connection

DRAIN

Seri

HEXFET®

Drain To Source Breakdown Voltage

75V

Power Dissipation Max

370W Tc

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Genişlik

9.65mm

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Power Dissipation

370W

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

100 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Direnç

3MOhm

Rise Time

110ns

Yükseklik

4.826mm

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

2

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier