IRFR9120NTRPBF

Teknik Özellikler

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Terminal

SMD/SMT

Dual Supply Voltage

100V

Power Dissipation

40W

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Seri

HEXFET®

Drain To Source Breakdown Voltage

-100V

Power Dissipation Max

40W Tc

Genişlik

6.22mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance Ciss Max Vds

350pF @ 25V

Turn On Delay Time

14 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

-6.6A

Case Connection

DRAIN

Terminal Formu

GULL WING

Nominal Vgs

-4 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Pulsed Drain Currentmax Idm

26A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

480m Ω @ 3.9A, 10V

Number Of Elements

1

Contact Plating

Tin

Turn Off Delay Time

28 ns

Yayın Yılı

1998

ECCN Kodu

EAR99

Jedec95 Code

TO-252AA

Current Continuous Drain Id25

6.6A Tc

Gate Charge Qg Max Vgs

27nC @ 10V

Reach Svhc

No SVHC

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

-6.6A

Fet Type

P-Channel