IRFR3910TRPBF

Teknik Özellikler

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

60A

Vgs Max

±20V

Additional Feature

AVALANCHE RATED

Turn Off Delay Time

37 ns

Contact Plating

Tin

Number Of Elements

1

Rds On Max Id Vgs

115m Ω @ 10A, 10V

Input Capacitance Ciss Max Vds

640pF @ 25V

Turn On Delay Time

6.4 ns

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Formu

GULL WING

Continuous Drain Current Id

16A

Case Connection

DRAIN

Transistor Element Material

SILICON

Power Dissipation Max

79W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Genişlik

6.22mm

Kurşunsuz

Contains Lead, Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Power Dissipation

52W

Dual Supply Voltage

100V

Terminal

SMD/SMT

Recovery Time

190 ns

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

25 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Direnç

115mOhm

Rise Time

27ns

Voltage Rated Dc

100V