IRFR3711TRPBF

Teknik Özellikler

Turn On Delay Time

12 ns

Input Capacitance Ciss Max Vds

2980pF @ 10V

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Case Connection

DRAIN

Continuous Drain Current Id

110A

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Pulsed Drain Currentmax Idm

440A

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Rds On Max Id Vgs

6.5m Ω @ 15A, 10V

Number Of Elements

1

Turn Off Delay Time

17 ns

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Power Dissipation

120W

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

20V

Seri

HEXFET®

Power Dissipation Max

2.5W Ta 120W Tc

Genişlik

6.22mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Yükseklik

2.3876mm

Avalanche Energy Rating Eas

460 mJ

Voltage Rated Dc

20V

Terminal Sayısı

2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Vgsth Max Id

3V @ 250μA

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

12 ns

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Not For New Designs

Rise Time

220ns