IRFR3710ZTRPBF

Teknik Özellikler

Dual Supply Voltage

100V

Power Dissipation

140W

Terminal

SMD/SMT

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Genişlik

6.22mm

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Power Dissipation Max

140W Tc

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Nominal Vgs

2 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

42A

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2930pF @ 25V

Turn On Delay Time

14 ns

Contact Plating

Tin

Turn Off Delay Time

53 ns

Rds On Max Id Vgs

18m Ω @ 33A, 10V

Number Of Elements

1

Pulsed Drain Currentmax Idm

220A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs Max

±20V

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

100nC @ 10V

Current Continuous Drain Id25

42A Tc

Max Junction Temperature Tj

175°C

ECCN Kodu

EAR99

Jedec95 Code

TO-252AA

Yayın Yılı

2004

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.1976mm