IRFR3504ZTRPBF

Teknik Özellikler

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Power Dissipation

90W

Akım

42A

Seri

HEXFET®

Drain To Source Breakdown Voltage

40V

Power Dissipation Max

90W Tc

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Genişlik

6.22mm

Input Capacitance Ciss Max Vds

1510pF @ 25V

Turn On Delay Time

15 ns

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

77A

Case Connection

DRAIN

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn Off Delay Time

30 ns

Rds On Max Id Vgs

9m Ω @ 42A, 10V

Number Of Elements

1

ECCN Kodu

EAR99

Jedec95 Code

TO-252AA

Yayın Yılı

2005

Gate Charge Qg Max Vgs

45nC @ 10V

Current Continuous Drain Id25

42A Tc

Akım Değeri

42A

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.7056mm

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Voltage Rated Dc

40V