IRFR3303PBF

Teknik Özellikler

Power Dissipation Max

57W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

30V

Ambalaj

Tube

JESD-609 Kodu

e3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Genişlik

6.223mm

Drain Currentmax Abs Id

20A

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation

57W

Dual Supply Voltage

30V

Terminal

SMD/SMT

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

120A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs Max

±20V

Turn Off Delay Time

16 ns

Number Of Elements

1

Rds On Max Id Vgs

31m Ω @ 18A, 10V

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

750pF @ 25V

Turn On Delay Time

11 ns

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Continuous Drain Current Id

33A

Case Connection

DRAIN

Transistor Element Material

SILICON

Fet Type

N-Channel

Akım Değeri

33A

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.7056mm

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-252AA

ECCN Kodu

EAR99

Yayın Yılı

1997