IRFR13N20DPBF

Teknik Özellikler

Input Capacitance Ciss Max Vds

830pF @ 25V

Avalanche Energy Rating Eas

130 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Transistor Element Material

SILICON

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Terminal Formu

GULL WING

Vgsth Max Id

5.5V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Pulsed Drain Currentmax Idm

52A

Parça Durumu

Discontinued

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

235m Ω @ 8A, 10V

Number Of Elements

1

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Yayın Yılı

2000

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-252AA

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

13A Tc

Drainsource On Resistancemax

0.235Ohm

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

38nC @ 10V

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tube

Seri

HEXFET®

Drain To Source Voltage Vdss

200V

Fet Type

N-Channel

Power Dissipation Max

110W Tc

Drain Currentmax Abs Id

13A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING