IRFR120ZTRPBF

Teknik Özellikler

Contact Plating

Tin

Turn Off Delay Time

27 ns

Number Of Elements

1

Rds On Max Id Vgs

190m Ω @ 5.2A, 10V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs Max

±20V

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Formu

GULL WING

Continuous Drain Current Id

8.7A

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

310pF @ 25V

Turn On Delay Time

8.3 ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Genişlik

6.22mm

Power Dissipation Max

35W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Power Dissipation

35W

Dual Supply Voltage

100V

Terminal

SMD/SMT

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Direnç

190MOhm

Rise Time

26ns

Recovery Time

36 ns

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

23 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount