Adet bazlı fiyat
- 1+ adet$7.70
- 10+ adet$7.26
- 100+ adet$6.85
- 500+ adet$6.46
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Dissipation Max
- 441W Tc
- Fet Type
- N-Channel
- Akım Değeri
- 105A
- Drain To Source Breakdown Voltage
- 150V
- Seri
- HEXFET®
- Ambalaj
- Bulk
- Uzunluk
- 16.0782mm
- Kılıf / Paket
- TO-274AA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 25 Weeks
- Genişlik
- 5.3mm
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2004
- Power Dissipation
- 441W
- Gate Charge Qg Max Vgs
- 390nC @ 10V
- Current Continuous Drain Id25
- 105A Tc
- Gate To Source Voltage Vgs
- 30V
- Pin Sayısı
- 3
- Parça Durumu
- Not For New Designs
- Vgs Max
- ±30V
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 60 ns
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 51 ns
- Number Of Elements
- 1
- Rds On Max Id Vgs
- 15m Ω @ 63A, 10V
- Rise Time
- 130ns
- Voltage Rated Dc
- 150V
- Element Configuration
- Single
- Turn On Delay Time
- 22 ns
- Input Capacitance Ciss Max Vds
- 6810pF @ 25V
- Yükseklik
- 20.8mm
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Vgsth Max Id
- 5V @ 250μA
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