IRFP9140NPBF

Teknik Özellikler

Continuous Drain Current Id

-23A

Case Connection

DRAIN

Transistor Element Material

SILICON

Nominal Vgs

-4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

1300pF @ 25V

Turn On Delay Time

15 ns

Number Of Elements

1

Rds On Max Id Vgs

117m Ω @ 13A, 10V

Turn Off Delay Time

51 ns

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

76A

Terminal

Through Hole

Power Dissipation

120W

Dual Supply Voltage

-100V

Kurşunsuz

Contains Lead, Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Genişlik

5.3mm

Kılıf / Paket

TO-247-3

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Ambalaj

Bulk

Power Dissipation Max

140W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

-100V

Montaj

Through Hole

Terminal Kaplaması

MATTE TIN OVER NICKEL

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

Element Configuration

Single

Threshold Voltage

-4V

Yükseklik

20.3mm

Voltage Rated Dc

-100V

Rise Time

67ns

Montaj Tipi

Through Hole

Direnç

117mOhm