IRFP7718PBF

Teknik Özellikler

Yayın Yılı

2013

ECCN Kodu

EAR99

Jedec95 Code

TO-247AC

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Current Continuous Drain Id25

195A Tc

Gate Charge Qg Max Vgs

830nC @ 10V

Reach Svhc

No SVHC

Power Dissipation

517W

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

HEXFET®, StrongIRFET™

Power Dissipation Max

517W Tc

Fet Type

N-Channel

Drain To Source Voltage Vdss

75V

Fabrika Tedarik Süresi

12 Weeks

Genişlik

5.31mm

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Uzunluk

15.87mm

Ds Breakdown Voltagemin

75V

Kılıf / Paket

TO-247-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

58 ns

Yükseklik

20.7mm

Input Capacitance Ciss Max Vds

29550pF @ 25V

Element Configuration

Single

Avalanche Energy Rating Eas

2004 mJ

Transistor Element Material

SILICON

Terminal Sayısı

3

Case Connection

DRAIN

Continuous Drain Current Id

195A

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

3.7V @ 250μA

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

160 ns

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active