IRFP7430PBF

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

100 ns

Vgs Max

±20V

Parça Durumu

Active

Recovery Time

52 ns

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Rise Time

105ns

Rds On Max Id Vgs

1.3m Ω @ 100A, 10V

Number Of Elements

1

Turn Off Delay Time

160 ns

Montaj Tipi

Through Hole

Direnç

1.3MOhm

Input Capacitance Ciss Max Vds

14240pF @ 25V

Yükseklik

20.7mm

Turn On Delay Time

32 ns

Element Configuration

Single

Avalanche Energy Rating Eas

722 mJ

Threshold Voltage

2.2V

Terminal Sayısı

3

Transistor Element Material

SILICON

Continuous Drain Current Id

195A

Montaj

Through Hole

Case Connection

DRAIN

Vgsth Max Id

3.9V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tube

Seri

HEXFET®, StrongIRFET™

Drain To Source Breakdown Voltage

40V

Power Dissipation Max

366W Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Genişlik

5.31mm

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kılıf / Paket

TO-247-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.87mm

Yayın Yılı

2010

ECCN Kodu

EAR99