IRFP4410ZPBF

Teknik Özellikler

Transistor Element Material

SILICON

Continuous Drain Current Id

97A

Case Connection

DRAIN

Nominal Vgs

4 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

4820pF @ 50V

Turn On Delay Time

16 ns

Rds On Max Id Vgs

9m Ω @ 58A, 10V

Number Of Elements

1

Turn Off Delay Time

43 ns

Vgs Max

±20V

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Terminal

Through Hole

Drainsource On Resistancemax

0.009Ohm

Dual Supply Voltage

100V

Power Dissipation

230W

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Genişlik

5.3086mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-247-3

Ambalaj

Bulk

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Power Dissipation Max

230W Tc

Terminal Sayısı

3

Montaj

Through Hole

Vgsth Max Id

4V @ 150μA

Yükseklik

20.7mm

Element Configuration

Single

Avalanche Energy Rating Eas

242 mJ

Threshold Voltage

4V

Rise Time

52ns

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

57 ns

Parça Durumu

Obsolete

Recovery Time

57 ns