Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Rds On Max Id Vgs
- 1.85m Ω @ 195A, 10V
- Number Of Elements
- 1
- Turn Off Delay Time
- 170 ns
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 350A
- Case Connection
- DRAIN
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 19230pF @ 50V
- Turn On Delay Time
- 43 ns
- Genişlik
- 5.3086mm
- Transistor Application
- SWITCHING
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Tube
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 75V
- Power Dissipation Max
- 520W Tc
- Terminal
- Through Hole
- Dual Supply Voltage
- 75V
- Power Dissipation
- 520W
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 220ns
- Montaj Tipi
- Through Hole
- Direnç
- 1.85MOhm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 260 ns
- Parça Durumu
- Active
- Recovery Time
- 200 ns
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Yükseklik
- 20.7mm
- Element Configuration
- Single
- Threshold Voltage
- 4V
- Fabrika Tedarik Süresi
- 12 Weeks
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