IRFP4332PBF

Teknik Özellikler

Ambalaj

Bulk

Seri

HEXFET®

Drain To Source Breakdown Voltage

250V

Power Dissipation Max

360W Tc

Genişlik

5.3mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-247-3

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Terminal

Through Hole

Dual Supply Voltage

250V

Power Dissipation

120mW

Vgs Max

±30V

Additional Feature

ULTRA LOW ON-RESISTANCE

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

33m Ω @ 35A, 10V

Number Of Elements

1

Contact Plating

Tin

Input Capacitance Ciss Max Vds

5860pF @ 25V

Transistor Element Material

SILICON

Continuous Drain Current Id

57A

Case Connection

DRAIN

Nominal Vgs

5 V

Çalışma Sıcaklığı

-40°C~175°C TJ

Akım Değeri

57A

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.875mm

Yayın Yılı

2006

ECCN Kodu

EAR99

Jedec95 Code

TO-247AC

Current Continuous Drain Id25

57A Tc

Gate Charge Qg Max Vgs

150nC @ 10V

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active