IRFP4227PBF

Teknik Özellikler

Additional Feature

FAST SWITCHING

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Pulsed Drain Currentmax Idm

260A

Number Of Elements

1

Rds On Max Id Vgs

25m Ω @ 46A, 10V

Contact Plating

Tin

Turn Off Delay Time

21 ns

Turn On Delay Time

33 ns

Input Capacitance Ciss Max Vds

4600pF @ 25V

Case Connection

DRAIN

Continuous Drain Current Id

65A

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-40°C~175°C TJ

Nominal Vgs

5 V

Ambalaj

Tube

Power Dissipation Max

330W Tc

Drain To Source Breakdown Voltage

200V

Seri

HEXFET®

Genişlik

5.3086mm

Kılıf / Paket

TO-247-3

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Terminal

Through Hole

Power Dissipation

330W

Dual Supply Voltage

240V

Fall Time Typ

31 ns

Drive Voltage Max Rds On Min Rds On

10V

Recovery Time

150 ns

Parça Durumu

Active

Rise Time

20ns

Direnç

25MOhm

Montaj Tipi

Through Hole

Threshold Voltage

5V

Element Configuration

Single

Yükseklik

20.7mm

Montaj

Through Hole