IRFP3415PBF

Teknik Özellikler

Transistor Element Material

SILICON

Threshold Voltage

4V

Seri

HEXFET®

Genişlik

5.3086mm

Power Dissipation

200W

Pin Sayısı

3

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Akım Değeri

43A

Radyasyon Dayanımı

No

Jedec95 Code

TO-247AC

Rds On Max Id Vgs

42m Ω @ 22A, 10V

Drain To Source Breakdown Voltage

150V

Current Continuous Drain Id25

43A Tc

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

2400pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Reach Svhc

No SVHC

Rise Time

55ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

43A

Yükseklik

20.7mm

Power Dissipation Max

200W Tc

Terminal Sayısı

3

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Voltage Rated Dc

150V

Element Configuration

Single

Fall Time Typ

69 ns

Kılıf / Paket

TO-247-3

Direnç

42mOhm

Gate Charge Qg Max Vgs

200nC @ 10V

Turn On Delay Time

12 ns

Dual Supply Voltage

150V

Vgsth Max Id

4V @ 250μA

Uzunluk

15.87mm

Ambalaj

Bulk