IRFP3206PBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

82ns

Yükseklik

24.99mm

Continuous Drain Current Id

200A

Number Of Channels

1

Power Dissipation Max

280W Tc

Terminal Sayısı

3

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Element Configuration

Single

Fall Time Typ

83 ns

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

6540pF @ 50V

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

840A

Reach Svhc

No SVHC

Pin Sayısı

3

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-247AC

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3m Ω @ 75A, 10V

Max Junction Temperature Tj

175°C

Drain To Source Breakdown Voltage

60V

Current Continuous Drain Id25

120A Tc

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Threshold Voltage

4V

Seri

HEXFET®

Power Dissipation

280W

Genişlik

5.3086mm

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

55 ns

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Ambalaj

Tube

Parça Durumu

Active