IRFP150MPBF

Teknik Özellikler

Seri

HEXFET®

Power Dissipation

160W

Genişlik

4.826mm

Transistor Element Material

SILICON

Threshold Voltage

4V

Radyasyon Dayanımı

No

Jedec95 Code

TO-247AC

Rds On Max Id Vgs

36m Ω @ 23A, 10V

Drain To Source Breakdown Voltage

100V

Current Continuous Drain Id25

42A Tc

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

140A

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1900pF @ 25V

Drive Voltage Max Rds On Min Rds On

10V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Element Configuration

Single

Fall Time Typ

40 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

56ns

Yükseklik

21.1mm

Continuous Drain Current Id

42A

Terminal Sayısı

3

Power Dissipation Max

160W Tc

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-247-3

Direnç

36MOhm

Gate Charge Qg Max Vgs

110nC @ 10V

Turn On Delay Time

11 ns

Vgsth Max Id

4V @ 250μA

Uzunluk

16.129mm

Ambalaj

Tube

Parça Durumu

Active

Transistor Application

SWITCHING

Number Of Elements

1