IRFIB41N15DPBF

Teknik Özellikler

Pin Sayısı

3

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Akım Değeri

41A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Rds On Max Id Vgs

45m Ω @ 25A, 10V

Drain To Source Breakdown Voltage

150V

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

41A Tc

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Threshold Voltage

5.5V

Genişlik

4.826mm

Power Dissipation

200W

Seri

HEXFET®

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

41A

Yükseklik

16.12mm

Drainsource On Resistancemax

0.045Ohm

Rise Time

63ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

30V

Tepe Reflow Süresi (maks. sn)

40

Montaj

Through Hole

Power Dissipation Max

48W Tc

Terminal Sayısı

3

Element Configuration

Single

Voltage Rated Dc

150V

Fall Time Typ

14 ns

Input Capacitance Ciss Max Vds

2520pF @ 25V

Fabrika Tedarik Süresi

14 Weeks

Additional Feature

AVALANCHE RATED

Case Connection

ISOLATED

Drive Voltage Max Rds On Min Rds On

10V

Reach Svhc

No SVHC

Turn On Delay Time

16 ns

Gate Charge Qg Max Vgs

110nC @ 10V

Uzunluk

10.6172mm