IRFI4410ZPBF

Teknik Özellikler

Case Connection

ISOLATED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

4910pF @ 50V

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Number Of Elements

1

Pulsed Drain Currentmax Idm

170A

Transistor Application

SWITCHING

Ambalaj

Tube

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Terminal Sayısı

3

Fet Type

N-Channel

Power Dissipation Max

47W Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Through Hole

Yükseklik

9.8044mm

Vgs Max

±30V

Continuous Drain Current Id

43A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rise Time

27ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Through Hole

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

30 ns

Turn Off Delay Time

43 ns

Element Configuration

Single

Threshold Voltage

4V

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3 Full Pack

Power Dissipation

47W

Genişlik

4.826mm

Seri

HEXFET®

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.7442mm

Vgsth Max Id

4V @ 150μA

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

110nC @ 10V