IRFI4229PBF

Teknik Özellikler

Genişlik

4.83mm

Power Dissipation

46W

Seri

HEXFET®

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Rds On Max Id Vgs

46m Ω @ 11A, 10V

Drain To Source Breakdown Voltage

250V

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

19A Tc

Pin Sayısı

3

Terminal Kaplaması

MATTE TIN OVER NICKEL

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

72A

Input Capacitance Ciss Max Vds

4480pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Case Connection

ISOLATED

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Fall Time Typ

13 ns

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

19A

Yükseklik

9.8mm

Drainsource On Resistancemax

0.046Ohm

Rise Time

17ns

Çalışma Sıcaklığı

-40°C~150°C TJ

Gate To Source Voltage Vgs

30V

Tepe Reflow Süresi (maks. sn)

40

Montaj

Through Hole

Power Dissipation Max

46W Tc

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

Turn On Delay Time

18 ns

Gate Charge Qg Max Vgs

110nC @ 10V

Uzunluk

10.63mm

Vgsth Max Id

5V @ 250μA

Transistor Application

SWITCHING

Ambalaj

Tube