IRFI4110GPBF

Teknik Özellikler

Pulsed Drain Currentmax Idm

290A

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Input Capacitance Ciss Max Vds

9540pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

71 ns

Element Configuration

Single

Power Dissipation Max

61W Tc

Terminal Sayısı

3

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

58ns

Yükseklik

16.13mm

Continuous Drain Current Id

72A

Terminal

Through Hole

Seri

HEXFET®

Power Dissipation

61W

Genişlik

4.83mm

Threshold Voltage

4V

Transistor Element Material

SILICON

Current Continuous Drain Id25

72A Tc

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Rds On Max Id Vgs

4.5m Ω @ 43A, 10V

Drain To Source Breakdown Voltage

100V

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Number Of Elements

1

Kurşunsuz

Lead Free

Ambalaj

Tube

Parça Durumu

Active

Transistor Application

SWITCHING

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Nominal Vgs

4 V