IRFI1310NPBF

Teknik Özellikler

Uzunluk

10.6172mm

Vgsth Max Id

4V @ 250μA

Dual Supply Voltage

100V

Turn On Delay Time

11 ns

Gate Charge Qg Max Vgs

120nC @ 10V

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

420 mJ

Nominal Vgs

4 V

Yayın Yılı

2003

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Drain Currentmax Abs Id

22A

Turn Off Delay Time

45 ns

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Ambalaj

Tube

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Akım Değeri

36A

ECCN Kodu

EAR99

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

24A Tc

Rds On Max Id Vgs

36m Ω @ 13A, 10V

Drain To Source Breakdown Voltage

100V

Isolation Voltage

2.5kV

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Threshold Voltage

4V

Transistor Element Material

SILICON

Power Dissipation

45W

Genişlik

4.826mm

Terminal

Through Hole

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Power Dissipation Max

56W Tc