IRFH8334TRPBF

Teknik Özellikler

Vgsth Max Id

2.35V @ 25μA

Gate Charge Qg Max Vgs

15nC @ 10V

Turn On Delay Time

8.3 ns

Jesd30 Code

R-PDSO-F5

Kılıf / Paket

8-PowerTDFN

Yayın Yılı

2007

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Nominal Vgs

1.8 V

Turn Off Delay Time

7 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

35 mJ

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

14A Ta 44A Tc

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

9m Ω @ 20A, 10V

Drain To Source Breakdown Voltage

30V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Terminal Formu

FLAT

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Power Dissipation

3.2W

Seri

HEXFET®

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Fall Time Typ

4.6 ns

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Power Dissipation Max

3.2W Ta 30W Tc

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Continuous Drain Current Id

14A