IRFH8311TRPBF

Teknik Özellikler

Power Dissipation

3.6W

Seri

HEXFET®

Kılıf / Paket

8-TQFN Exposed Pad

Current Continuous Drain Id25

32A Ta 169A Tc

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

2.1m Ω @ 20A, 10V

Radyasyon Dayanımı

No

Vgsth Max Id

2.35V @ 100μA

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

66nC @ 10V

Turn On Delay Time

21 ns

Pin Sayısı

8

Kurşunsuz

Lead Free

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

4960pF @ 10V

Montaj Tipi

Surface Mount

Yayın Yılı

2007

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

12 ns

Turn Off Delay Time

21 ns

Configuration

Single

Gate To Source Voltage Vgs

20V

Power Dissipation Max

3.6W Ta 96W Tc

Fet Type

N-Channel

Montaj

Surface Mount

Vgs Max

±20V

Continuous Drain Current Id

32A

Rise Time

26ns

Çalışma Sıcaklığı

-55°C~150°C TJ